Neutron Transmutation Doping of Silicon Slices

  • Bobbie D. Stone
  • Aliene D. Henry
  • Steve L. Gunn


A process for irradiating float zone crystal in slice form to reduce irradiation charges is described. Results indicate that breakage losses are a maximum of 8% and may be as low as 3%. In this process, wherein ingot identity is maintained, targeting precision and resistivity uniformity are equivalent to rod doped NTD crystals. Lifetime measured on 6mm slugs handled along with the slices are significantly lower than those observed on rods, but a 100 µ second minimum specification is still possible at resistivities above 25 ohm cm. Cosmetic stains on as-cut slices were observed, but techniques for avoiding them were devised. A qualitative cost comparison of the two doping methods is made.


Minority Carrier Lifetime Reactor Facility Undoped Crystal Neutron Transmutation Doping Silicon Slice 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    P. D. Blais and C. F. Seiler, “The Measurement and the Effects of Processing on Recombination Lifetime” ASTM Committee F-l on Electronics Symposium on Lifetime in Silicon, San Diego, CA. February 15–16, 1979. Paper 12.Google Scholar
  2. 2.
    B. D. Stone, D. B. Hines, S. L. Gunn and D. McKown, “Detection and Identification of Potential Impurities Activated by Neutron Irradiation of Czochralski Silicon” Neutron Transmutation Doping in Semiconductors, J. M. Meese, Editor, Plenum Press, New York 1978 Page 11.Google Scholar
  3. 3.
    E. W. Haas and J. A. Martin, “Nuclear Transmutation Doping from the Viewpoint of Radioactivity Formation” Ibid p. 27.Google Scholar
  4. 4.
    F. G. Vieweg-Gutberlet, “Minority Carrier Lifetime Measurement on Silicon — An Overview” ASTM Symposium loc. cit. Paper 1.Google Scholar
  5. 5.
    T. L. Chu, Southern Methodist University, Personal Communication.Google Scholar
  6. 6.
    H. Reichl, I. Ruge, P. Eichinger and J. Muller, “Minority Carrier Lifetime Profile MEasurement by Use of the Photocurrent Technique”, ASTM Symposium, loc cit Paper 14.Google Scholar
  7. 7.
    D. T. Chu, Solar Semiconductor Instruments, Bulletin 278 “Diffusion Length Measurement Service”.Google Scholar

Copyright information

© Plenum Press, New York 1981

Authors and Affiliations

  • Bobbie D. Stone
    • 1
  • Aliene D. Henry
    • 1
  • Steve L. Gunn
    • 2
  1. 1.Monsanto CompanySt. PetersUSA
  2. 2.University of MissouriColumbiaUSA

Personalised recommendations