Abstract
Some preliminary works on NTD-silicon have been done in a 3.5 MW swimming pool reactor since September 1979. In part A of this article, a brief account of the work is given, including:
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1.
irradiation conditions and irradiation facility;
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2.
the discrepancy and uniformity of resistivity of NTD-silicon;
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3.
methods for cleaning and identification of NTD-silicon radioactivity;
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4.
batch annealing results as done in the Institute of Non-ferrous Metal.
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References
J. M. Meese and P. J. Glairon, Neutron Transmutation Doping in Semiconductor, ed. by J. M. Meese (1979) P. 109.
A. Yusa, Y. Yatsurugi and T. Takaishi, J. Electrochem. Soc. 124, No. 2, 312 (1977).
E. W. Haas and J. A. Martin, Neutron Transmutation Doping in Semiconductor, ed. by J. M. Meese (1979) P. 27.
Cui Shufan, Ge Peiwen, Zhao Yaqin and Wu Lansheng, ACTA Physica Sinica, 28, No. 6, (1979) P. 791.
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© 1981 Plenum Press, New York
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Cuengang, L., Yaoxin, L. (1981). A Preliminary Study on NTD-Silicon. In: Guldberg, J. (eds) Neutron-Transmutation-Doped Silicon. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-3261-9_19
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DOI: https://doi.org/10.1007/978-1-4613-3261-9_19
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4613-3263-3
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