Abstract
At the present time, the neutron irradiation of mono-crystal silicon ingots for the purpose of “doping” with phosphorous is an established production process. Each year tens of tonnes of silicon ingots are being transported from producers to nuclear reactor centres, are then irradiated; transported back to the producers, machined, sliced and polished and the slices eventually incorporated in electronic devices with which the general public have contact and free access.
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© 1981 Plenum Press, New York
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Smith, T.G.G. (1981). The Health and Safety Aspects of Neutron Doped Silicon. In: Guldberg, J. (eds) Neutron-Transmutation-Doped Silicon. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-3261-9_12
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DOI: https://doi.org/10.1007/978-1-4613-3261-9_12
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4613-3263-3
Online ISBN: 978-1-4613-3261-9
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