Quantum Effect on Transverse Magnetoresistance of Degenerate Piezoelectric Semiconductors in Strong Magnetic Fields
The transverse magnetoresistance for nondegenerate semiconductors with the isotropic parabolic energy bands has been investigated for the case where acoustic phonons are the dominant scattering mechanism.1 It was shown that the transverse magnetoresistance increases with the magnetic field in the quantum limit. Some experimental results2 for the inelastic scattering mechanism showed that the transverse magnetoresistance depends strongly on the magnetic field. In this paper we calculate the transverse magnetoresistance of degenerate piezoelectric semiconductors like n-type InSb with isotropic parabolic energy bands throughout the strong-field region in which the splitting of Landau levels is much greater than the average carrier energy. In a crystal with low symmetry, the piezoelectric interaction may become important. This is the interaction between acoustic phonons and electrons through the polarization induced by the piezoelectricity of the crystal. Therefore we investigate the quantum effect of the transverse magnetoresistance for the inelastic scattering of acoustic phonons from the deformation-potential and piezoelectric couplings. The scattering is treated in the Born approximation for strong magnetic fields. We assume that the inelasticity is the dominant mechanism in resolving the divergence, and the cutoff energy due to the inelastic scattering does not change appreciably with the temperature.
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