Abstract
We present a bidimensional Monte Carlo simulation taken into account the electric field variations due to the conduction electron distribution. We give some results for an unidimensional N+NN+ device and the first results for a bidimensional implanted planar structure.
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© 1984 Plenum Press, New York
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Hesto, P., Pone, J.F., Castagné, R., Pelouard, J.L. (1984). A Dynamic Monte Carlo Simulation of Conduction in Submicron Gaas Devices at 77 K. In: Grubin, H.L., Hess, K., Iafrate, G.J., Ferry, D.K. (eds) The Physics of Submicron Structures. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-2777-6_9
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DOI: https://doi.org/10.1007/978-1-4613-2777-6_9
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4612-9714-7
Online ISBN: 978-1-4613-2777-6
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