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Physics and Modeling Considerations for VLSI Devices

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The Physics of Submicron Structures

Abstract

Recent results concerning spatial and temporal transport in submicron devices identify significant aspects of the role of boundary conditions, scaling for suggesting new materials, and structural device changes. These results are discussed as a means of achieving high speed and high frequency devices.

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References

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Author information

Authors and Affiliations

  1. Scientific Research Associates, Inc., Glastonbury, Connecticut, 06033, USA

    H. L. Grubin & J. P. Kreskovsky

  2. U.S. Army Electronics Technology & Devices Laboratory, Fort Monmouth, New Jersey, 07703, USA

    G. J. Iafrate

  3. Colorado State University, Fort Collins, Colorado, 80521, USA

    D. K. Ferry

  4. Naval Research Laboratory, Washington, D.C, 20375, USA

    R. F. Greene

Authors
  1. H. L. Grubin
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  2. J. P. Kreskovsky
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  3. G. J. Iafrate
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  4. D. K. Ferry
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  5. R. F. Greene
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Editor information

Editors and Affiliations

  1. Scientific Research Associates, Inc., Glastonbury, Connecticut, USA

    H. L. Grubin

  2. University of Illinois, Urbana-Champaign, Illinois, USA

    K. Hess

  3. U.S. Army Electronics Technology and Devices Laboratory, Fort Monmouth, New Jersey, USA

    G. J. Iafrate

  4. Arizona State University, Tempe, Arizona, USA

    D. K. Ferry

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© 1984 Plenum Press, New York

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Grubin, H.L., Kreskovsky, J.P., Iafrate, G.J., Ferry, D.K., Greene, R.F. (1984). Physics and Modeling Considerations for VLSI Devices. In: Grubin, H.L., Hess, K., Iafrate, G.J., Ferry, D.K. (eds) The Physics of Submicron Structures. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-2777-6_6

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  • DOI: https://doi.org/10.1007/978-1-4613-2777-6_6

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-9714-7

  • Online ISBN: 978-1-4613-2777-6

  • eBook Packages: Springer Book Archive

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