Two-Dimensional Electron Gas Fet (TEGFET)
Performance of TEGFET are first recalled on low noise discrete devices and high speed-low power integrated circuits. In particular delay times of 18,4 and 32,5 pS have been obtained at room temperature, associated with power dissipation of 900 and 62µW respectively.
The main parameters which contribute to these performances are analysed. The electron velocity which has been found to be 1.1 x 107 cm/s, is not a factor of improvement, compared to GaAs FET. High electron mobility and more specifically the low surface potential of A1GaAs reduce the access resistance. Theoretical calculations predict that TEGFET is three times faster than GaAs FET, even if the electron velocity is not higher. Explanations based on the charge control law of the two-dimensional electron gas by the Schottky gate are given.
KeywordsElectron Velocity Schottky Barrier Height Gate Length High Electron Mobility Access Resistance
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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© Plenum Press, New York 1984