Abstract
The static electron velocity-field characteristics for n type GaAs, InP, In0.53Ga0.47As, and In0.8Ga0.44P0.56 have been measured using a microwave time-of-flight technique. Drift velocities were measured at temperatures from 95 K to 400 K over a range of field strengths from about 10 kV/cm to beyond 200 kV/cm at some temperatures. InP exhibits the highest velocity at high fields (∿ 100 kV/cm) while the lowest high-field velocity was measured in In0.53Ga0.47As. The variation of the high-field velocity was measured in In0.53Ga0.47As is approximately one third of that obtained with GaAs and InP, and is even smaller in In0.8Ga0.2As0.44P0.56.
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© 1984 Plenum Press, New York
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Windhorn, T.H., Cook, L.W., Roth, T.J., Stillman, G.E. (1984). High-Field Transport in GaAs, InP, and InxGa1-xAsyP1-y . In: Grubin, H.L., Hess, K., Iafrate, G.J., Ferry, D.K. (eds) The Physics of Submicron Structures. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-2777-6_27
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DOI: https://doi.org/10.1007/978-1-4613-2777-6_27
Publisher Name: Springer, Boston, MA
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