n-i-p-i Doping Superlattices-Semiconductors with Tunable Electronic Properties

  • Gottfried H. Döhler


We discuss the concept and the basic properties of a new class of artificial semiconductors. These n-i-p-i doping superlattices are a periodic sequence of ultra-thin n- and p-doped layers of the same semiconducting material, possibly separated by undoped (i-) layers in between. Some experimental results are presented as verifications of the theoretical predictions. They also exemplify the wide variety of unusual phenomena in n-i-p-i crystals, which originate from their tunable electronic properties.


Carrier Concentration Quasi Fermi Level Subband Structure Physics Conference Series Space Charge Potential 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    See, for example, R. Dingle, in “Festkörperprobleme: Advances in Solid State Physics”, edited by H. J. Queisser (Vieweg, Braunschweig, 1975), Vol. XV, p. 21;Google Scholar
  2. 1.
    L. Esaki and L. L. Chang, Thin Solid Films, 36, 285 (1976).ADSCrossRefGoogle Scholar
  3. 2.
    G. A. Sai-Halasz, Institute of Physics Conference Series 43, 21 (1979).Google Scholar
  4. 3.
    K. Ploog, H. Kunzel, J. Knecht, A. Fischer, and G. H. Döhler, Appl. Phys. Lett. 38, 870 (1981).ADSCrossRefGoogle Scholar
  5. 4.
    G. H. Döhler, H. Künzel, D. Olego, K. Ploog, P. Ruden, and H. J. Stolz, Phys. Rev. Lett. 47, 864 (1981).ADSCrossRefGoogle Scholar
  6. 5.
    H. Kiinzel, G. H. Döhler, and K. Ploog, Appl. Phys. A 27, 1 (1982).Google Scholar
  7. 5.
    H. Kiinzel, G. H. Döhler, and K. Ploog, Appl. Phys. A 27, 1 (1982).ADSCrossRefGoogle Scholar
  8. 5.
    H. Kiinzel, G. H. Döhler, and K. Ploog, Appl. Phys. A 27, 1 (1982).Google Scholar
  9. 8.
    G. H. Döhler, Phys. Stat. Sol. (b) 52, 79, and 533 (1972).ADSCrossRefGoogle Scholar
  10. 9.
    G. H. Döhler, J. Vac. Sci. Technol. 16, 851 (1979).ADSGoogle Scholar
  11. 10.
    G. H. Döhler, K. Ploog, Prog. Crystal Growth Charact. 2, 145 (1979).CrossRefGoogle Scholar
  12. 11.
    W. Kohn, L. Sham, Phys. Rev. 140, A 1133 (1965).MathSciNetADSCrossRefGoogle Scholar
  13. 12.
    P. Ruden, G. H. Döhler, submitted for publicationGoogle Scholar
  14. 13.
    K. Ploog, and H. Künzel, submitted for publication.Google Scholar
  15. 14.
    K. Ploog, A. Fischer, G. H. Döhler, and H. Künzel, Institute of Physics Conference Series 56, 721 (1981).Google Scholar
  16. 15.
    G. H. Döhler, Proceedings of the 2nd Int. Symp. on MBE and CST, Tokyo (1982), to be published.Google Scholar
  17. 16.
    H. Jung, H. Künzel, K. Ploog, and G. H. Döhler, unpublished.Google Scholar
  18. 17.
    W. Rehm, G. H. Dohler, H. Jung, H. Künzel, K. Ploog, P. Ruden, Proceedings of the 16th Int. Conference on the Physics of Semiconductors, Montpellier (1982) to be published.Google Scholar
  19. 18.
    H. Künzel, G. H. Dohler, K. Ploog, P. Ruden, Submitted for publication.Google Scholar

Copyright information

© Plenum Press, New York 1984

Authors and Affiliations

  • Gottfried H. Döhler
    • 1
    • 2
  1. 1.Max-Planck-Institut für FestkörperforschungStuttgart 80Germany
  2. 2.Institut für Angewandte PhysikJohannes Kepler UniversitätLinzAustria

Personalised recommendations