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n-i-p-i Doping Superlattices-Semiconductors with Tunable Electronic Properties

  • Gottfried H. Döhler

Abstract

We discuss the concept and the basic properties of a new class of artificial semiconductors. These n-i-p-i doping superlattices are a periodic sequence of ultra-thin n- and p-doped layers of the same semiconducting material, possibly separated by undoped (i-) layers in between. Some experimental results are presented as verifications of the theoretical predictions. They also exemplify the wide variety of unusual phenomena in n-i-p-i crystals, which originate from their tunable electronic properties.

Keywords

Carrier Concentration Quasi Fermi Level Subband Structure Physics Conference Series Space Charge Potential 
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Copyright information

© Plenum Press, New York 1984

Authors and Affiliations

  • Gottfried H. Döhler
    • 1
    • 2
  1. 1.Max-Planck-Institut für FestkörperforschungStuttgart 80Germany
  2. 2.Institut für Angewandte PhysikJohannes Kepler UniversitätLinzAustria

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