Performance of Submicron Silicon MOSFETs Fabricated by Edge-Defined Vertical-Etch Technique

  • H. Shichijo
  • Y. T. Lin
  • T. C. Holloway
  • Y. C. Lin
  • W. R. Hunter

Abstract

This paper describes the performance of n-channel and p-channel submicrometer silicon MOS devices fabricated by edge-defined vertical etch techniques. Submicrometer MOS devices with gate length of 0.3 to 0.6 μm and gate oxide thickness of 8 to 16 nm have been fabricated with self-aligned, lightly doped source/drain extensions using a sidewall oxide spacer technology. Some of the devices have been fabricated with PtSi formed on the gate and source/drain to reduce series resistance. Mobility, linear and saturation gain, and drain saturation current have been examined as a function of gate length. Finally, ring oscillator performance for both n-channel and p-channel devices is discussed.

Keywords

Arsenic Boron Resis Undercut Backfilling 

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References

  1. P.K. Chatterjee, W.R. Hunter, T.C. Holloway, and Y.T. Lin, IEEE Trans. Elecyron Devices Lett.,EDL-1, 220 (1980).Google Scholar
  2. H. Shichijo, IEDM Technical Digest, p. 219 (1981).Google Scholar
  3. W.R. Hunter, T.C. Holloway, P.K. Chatterjee, and A.F. Tasch, Jr., IEDM Technical Digest, p. 764 (1980).Google Scholar
  4. W.R. Hunter, T.C. Holloway, P.K. Chatterjee, and A.F. Tasch, Jr., IEEE Electron Devices Lett.,EDL-2, 4 (1981). A.F. Tasch, Jr., P.K. Chatterjee, and H.S. Fu, U.S. Patent applied for, 1979.Google Scholar
  5. D.B. Scott, Y.C. See, C.K. Lau, and R.D. Davies, IEDM Technical Digest, p. 538 (1981).Google Scholar
  6. D.B. Scott, W.R. Hunter, and H. Shichijo, IEEE Trans Electron Devices,ED-29, 651 (1982).Google Scholar
  7. S. Ogura, P.J. Tsang, W.W. Walker, D.L. Critchlow, and J.F. Shepard, IEEE Trans. Electron Devices,ED-27, 1359 (1980).Google Scholar
  8. P.I. Suciu and R.C. Johnston, IEEE Trans. Electron Devices,ED-27, 1846 (1980).Google Scholar
  9. Y. El-Mansy, IEEE Trans. Electron Devices,ED-29, 567 (1982).Google Scholar
  10. W. Fichtner, R.M. Levin, and G.W. Taylor, IEEE Electron Devices Lett.,EDL-3, 34 (1982).Google Scholar

Copyright information

© Plenum Press, New York 1984

Authors and Affiliations

  • H. Shichijo
    • 1
  • Y. T. Lin
    • 1
  • T. C. Holloway
    • 1
  • Y. C. Lin
    • 1
  • W. R. Hunter
    • 1
  1. 1.VLSI LaboratoryCentral Research Laboratories Texas Instruments IncorporatedDallasUSA

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