Measurements of the Gamma Abundance of Silicon-31

  • E. J. ParmaJr.
  • R. R. Hart

Abstract

Direct determination of the induced 31p concentrations in neutron transmutation doped silicon may be obtained by measurements of absolute activities of 31Si by detection of the 1.266 MeV gamma-rays that are emitted, provided the gamma abundance is known. In previous work it was inferred that the gamma abundance of 31Si is significantly lower than the accepted value of 7 × 10-4. To confirm this result a 4 π proportional counter and a calibrated Ge(Li) detector were used to measure both the absolute beta and gamma activities, respectively, of thin silicon samples. The resultant gamma abundance of 31Si was found to be 5.9 × 10-4 ± 5%.

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Copyright information

© Plenum Press, New York 1984

Authors and Affiliations

  • E. J. ParmaJr.
    • 1
  • R. R. Hart
    • 1
  1. 1.Department of Nuclear EngineeringTexas A&M UniversityUSA

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