Measurements of the Gamma Abundance of Silicon-31
Direct determination of the induced 31p concentrations in neutron transmutation doped silicon may be obtained by measurements of absolute activities of 31Si by detection of the 1.266 MeV gamma-rays that are emitted, provided the gamma abundance is known. In previous work it was inferred that the gamma abundance of 31Si is significantly lower than the accepted value of 7 × 10-4. To confirm this result a 4 π proportional counter and a calibrated Ge(Li) detector were used to measure both the absolute beta and gamma activities, respectively, of thin silicon samples. The resultant gamma abundance of 31Si was found to be 5.9 × 10-4 ± 5%.
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