Neutron Transmutation Doping of p-Type Czochralski-Grown Gallium Arsenide
We have studied the neutron transmutation doping process in bulk GaAs grown by the liquid encapsulated Czochralski technique. By choosing undoped, but initially p-type samples for irradiation, we observed the effects of transmutation doping with Se and Ge donors both at low doping levels as added compensation in p-type samples, and at higher doping levels as added donors in n-type samples. We found that a measurable fraction of NTD-produced Ge atoms act as acceptors rather than donors in our material.
Transmutation dopings of eight different concentrations from 3.8xl015 to 6.3xl017 (Se + Ge)/cm3 (determined from nuclear measurements) are included in our study. We characterized irradiated GaAs samples by temperature dependent resistivity and Hall effect measurements and measurements of low temperature photoluminescence Our p-type starting material has been fully characterized by these same techniques and found to contain three different acceptor levels with a total acceptor concentration of 4 to 6xlO16/cm3 and total initial compensating donor concentration of 1 to 2xl015/cm3.
By following individual irradiated samples through a series of heat treatments, we have studied the effects of radiation damage on the electrical properties of both p-type and n-type NTD GaAs samples and observed the annealing of these radiation defects.
KeywordsGallium Arsenide Hall Effect Measurement Liquid Encapsulate Czochralski Neutron Transmutation Doping Transmutation Doping
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