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Recent Progress in the Theory of Amorphous Semiconductors

  • Morrel H. Cohen
  • C. M. Soukoulis
  • E. N. Economou
Part of the Institute for Amorphous Studies Series book series (IASS)

Abstract

The scientific investigation of amorphous and liquid semiconductors originated in the pioneering work of Ioffe and Regel.1 Ioffe had realized clearly that the principal feature of the electronic structure of semiconductors, the band gap, depended on the existence of short-range order rather than long-range order and could survive the introduction of disorder.2 From these beginnings, a vast field has emerged, as documented in the landmark book by Mott and Davis.3 Highly sophisticated experiments using a wide range of techniques are carried out on a great diversity of materials. However, in contrast to the field of crystalline semiconductors at a comparable stage of development, no standardized theory has emerged which could be used to interpret experiments and predict the properties of new materials.

Keywords

Band Edge Localization Length Small Polaron Amorphous Semiconductor Coherent Potential Approximation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press , New York 1985

Authors and Affiliations

  • Morrel H. Cohen
    • 1
  • C. M. Soukoulis
    • 2
  • E. N. Economou
    • 3
  1. 1.Exxon Research and Engineering CompanyAnnandaleUSA
  2. 2.Ames Laboratory and Department of PhysicsIowa State UniversityAmesUSA
  3. 3.Department of Physics and Research Center of CreteUniversity of CreteHeraklio, CreteGreece

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