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Physics of Disordered Materials pp 305–326Cite as

Recent Progress in the Theory of Amorphous Semiconductors

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Part of the book series: Institute for Amorphous Studies Series ((IASS))

Abstract

The scientific investigation of amorphous and liquid semiconductors originated in the pioneering work of Ioffe and Regel.1 Ioffe had realized clearly that the principal feature of the electronic structure of semiconductors, the band gap, depended on the existence of short-range order rather than long-range order and could survive the introduction of disorder.2 From these beginnings, a vast field has emerged, as documented in the landmark book by Mott and Davis.3 Highly sophisticated experiments using a wide range of techniques are carried out on a great diversity of materials. However, in contrast to the field of crystalline semiconductors at a comparable stage of development, no standardized theory has emerged which could be used to interpret experiments and predict the properties of new materials.

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Author information

Authors and Affiliations

  1. Exxon Research and Engineering Company, Annandale, New Jersey, 08801, USA

    Morrel H. Cohen

  2. Ames Laboratory and Department of Physics, Iowa State University, Ames, Iowa, 50011, USA

    C. M. Soukoulis

  3. Department of Physics and Research Center of Crete, University of Crete, Heraklio, Crete, Greece

    E. N. Economou

Authors
  1. Morrel H. Cohen
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  2. C. M. Soukoulis
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  3. E. N. Economou
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Editor information

Editors and Affiliations

  1. Massachusetts Institute of Technology, Cambridge, Massachusetts, USA

    David Adler

  2. University of Chicago, Chicago, Ilinois, USA

    Hellmut Fritzsche

  3. Energy Conversion Devices, Inc, Troy, Michigan, USA

    Stanford R. Ovshinsky

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© 1985 Plenum Press , New York

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Cohen, M.H., Soukoulis, C.M., Economou, E.N. (1985). Recent Progress in the Theory of Amorphous Semiconductors. In: Adler, D., Fritzsche, H., Ovshinsky, S.R. (eds) Physics of Disordered Materials. Institute for Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-2513-0_25

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  • DOI: https://doi.org/10.1007/978-1-4613-2513-0_25

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-9519-8

  • Online ISBN: 978-1-4613-2513-0

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