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MOS Transistor Characteristics

  • Marco Annaratone
Part of the The Kluwer International Series in Engineering and Computer Science book series (SECS, volume 16)

Abstract

The literature on MOS transistor characteristics is extensive. The purpose of this chapter is to review the fundamentals of MOS technology through the use of simplified models. A more accurate model to compute the voltage transfer function of an inverter will be introduced in Section 2.6. Most of the equations presented in this chapter will not be justified. The reader interested in a more comprehensive treatment of MOS physics should refer to references at the end of the chapter [34,22,35,25,21].

Keywords

Threshold Voltage Power Dissipation CMOS Inverter Noise Margin Transmission Gate 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Kluwer Academic Publishers 1986

Authors and Affiliations

  • Marco Annaratone
    • 1
  1. 1.Carnegie-Mellon UniversityPittsburghUSA

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