Abstract
A Metal-Insulator-Silicon (MIS) structure consists of a silicon substrate covered by an insulating layer upon which a conductive electrode is deposited (figure 4.1).
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© 1986 Kluwer Academic Publishers
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El-Kareh, B., Bombard, R.J. (1986). The MIS CV Technique. In: Introduction to VLSI Silicon Devices. The Kluwer International Series in Engineering and Computer Science, vol 10. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-2275-7_4
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DOI: https://doi.org/10.1007/978-1-4613-2275-7_4
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