Abstract
The discussion in the preceding chapter revealed two properties of the pn junction that are basic to bipolar transistor action:
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a)
When a small forward bias voltage (0 < V F < 1V) is applied to the junction, minority carriers are injected into both sides of the junction, giving rise to a relatively large forward current.
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b)
When a low to moderate reverse bias voltage (V R < breakdown voltage) is applied to the junction, a very small leakage current is measured through the junction.
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© 1986 Kluwer Academic Publishers
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El-Kareh, B., Bombard, R.J. (1986). The Bipolar Transistor. In: Introduction to VLSI Silicon Devices. The Kluwer International Series in Engineering and Computer Science, vol 10. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-2275-7_3
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DOI: https://doi.org/10.1007/978-1-4613-2275-7_3
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