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PN Junctions

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Part of the book series: The Kluwer International Series in Engineering and Computer Science ((SECS,volume 10))

Abstract

So far we have discussed silicon samples which were either p-type or n-type. In this chapter we consider a silicon crystal which is p-type on one side and n-type on the other. The boundary between the p-region and the n-region is called a pn junction The behavior of a pn junction is basic to the operation of transistors and integrated circuits. Nearly all silicon circuits have pn junctions in them. Consequently, it is essential to fully understand the junction behavior before proceeding to bipolar transistors (chapter 3), Field-Effect transistors and CMOS structures (chapter 6). We begin this chapter with a description of a simple pn junction without any external bias voltage applied to it. We also describe basic processing steps that are used to fabricate typical pn junctions in the planar technology. We then discuss the current-voltage characteristics of the junction under forward and reverse bias conditions and their relation to the vertical and horizontal geometries.

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References

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© 1986 Kluwer Academic Publishers

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El-Kareh, B., Bombard, R.J. (1986). PN Junctions. In: Introduction to VLSI Silicon Devices. The Kluwer International Series in Engineering and Computer Science, vol 10. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-2275-7_2

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  • DOI: https://doi.org/10.1007/978-1-4613-2275-7_2

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-9404-7

  • Online ISBN: 978-1-4613-2275-7

  • eBook Packages: Springer Book Archive

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