Abstract
Past investigations of electric-field modulation of the normal-state and superconducting properties of thin films are reviewed and compared with recent work on amorphous-composite In/InOx thin films with electron carrier density as low as 1020 cm-3. Electric charge induced in the In/InOx films by a capacitatively- coupled gate electrode has a particularly strong influence when the disorder (resistivity) is increased towards a critical value where superconductivity rapidly disappears. The experimentally-measured field-effect mobility, the unperturbed electron density, and the transition temperature are strongly dependent on oxide content, substrate material, and dielectric capping overlayers. The field-effect measurements confirm the importance of electronic states at the metal-dielectric interfaces and enable a description of “interface dominated superconductivity” in this and possibly other low electron density superconductors. Implications for the high T c oxides are also presented.
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Hebard, A.F., Fiory, A.T. (1987). Electric-Field Modulation of Low Electron Density Thin-Film Superconductors. In: Wolf, S.A., Kresin, V.Z. (eds) Novel Superconductivity. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1937-5_2
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DOI: https://doi.org/10.1007/978-1-4613-1937-5_2
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