Optical Properties of InAs-GaSb Superlattices Under Hydrostatic Pressure
At the interface between InAs and GaSb the GaSb valence band is 150 meV higher than the InAs conduction band. This fact leads for certain thicknesses of the layers of InAs and GaSb in superlattices to an electron subband at lower energy than a hole like subband. By means of hydrostatic pressure this arrangement can be inverted. The energy difference between these bands, measured by magneto-optical means, as a function of hydrostatic pressure, allows to determine the pressure dependence of the band offset. It is found that the InAs conduction band increases at a rate of 5.6meV/kbar with respect to the GaSb valence band, implying a pressure dependence of the valence band offset. Furthermore the results of the pressure dependence show a gradual transition from interband to intraband like character resulting from the band-mixing, which shows up clearly in this experiment.
KeywordsValence Band Hydrostatic Pressure Band Edge Pressure Dependence Landau Level
Unable to display preview. Download preview PDF.
- 5.J.C. Maan, “Infrared and Millimetre waves”, edited by K.J. Button (Academic Press, New York), Vol. 8, Ch. 9 (1982).Google Scholar
- 6.M. Altarelli and references therein, this volume.Google Scholar
- 7.G. Bastard and references therein, this volume.Google Scholar
- 8.G. Martinez, “Handbook of semiconductors”, edited by M. Balkanski (North Holland, Amsterdam), Vol. 2, p. 132 (1980).Google Scholar
- 13.W.A. Harrison, “Electronic Structure and the Properties of Solids”, (W.H. Freeman and Cy., San Francisco), 1980.Google Scholar