Magnetic Field Effects on the Electronic States of Narrow-Gap Low-Dimensional Structures

  • M. Altarelli
Part of the NATO ASI Series book series (NSSB, volume 152)

Abstract

The electronic structure of small-gap semiconductors is characterized by important band mixing and non-parabolicity at energies of interest for the interpretation of all experiments. In heterostructures, the coupling of bands with different character produces a strongly non-parabolic dispersion of the subbands and, when a magnetic field is present, a complicated Landau level pattern. This will be exemplified by results of calculations performed with the envelope-function method for InAs-GaSb and HgTe-CdTe heterostructures. Current problems in the interpretation of magneto-optical and Quantum Hall experiments are discussed.

Keywords

GaSb HgTe 

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Copyright information

© Plenum Press, New York 1987

Authors and Affiliations

  • M. Altarelli
    • 1
  1. 1.Hochfeld-MagnetlaborMax-Planck-Institut fuer FestkoerperforschungGrenobleFrankreich

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