Optical, Magneto-Optical and Transport Investigations of the Narrow-Gap System InAsx Sb1-x

  • F. Kuchar
  • Z. Wasilewski
  • R. A. Stradling
  • R. J. Wagner
Part of the NATO ASI Series book series (NSSB, volume 152)


Mixed crystals of III-V semiconducting compounds are of considerable interest as regards their fundamental properties as wells as applications in electronic and optoelectronic devices. One of the fundamental properties of a semiconductor — the minimum optical bandgap — is usually smaller in the mixed crystals than the concentration weighted average of the binary constituents (“bandgap bowing”). In the mixed crystal system InAsxSb1-x with 0<x<0.7 the bandgap exhibits values which are smaller than at x=0 being the smallest values appearing in III–V semiconductors.1 At x=0.4 the energy gap is 0.1 eV at 300K, increasing to 0.15 eV at OK. This property makes the mixed crystals with low x values extremely interesting as detectors for the 8–12µm spectral range (atmospheric window). The compound with x=0.91 (εG=0.33eV at T=77K) has potential applications for another atmospheric window between 3 and 5 µm and for fiber-optics communications at relatively long wavelenghts. It can be grown lattice matched on GaSb. In such narrow-gap semiconductors, the conduction-electron parameter most directly related to the band gap is the effective mass which can be deduced from far-infrared magneto-optical spectra.


Zinc Helium Brittleness Sapphire Chalcopyrite 


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Copyright information

© Plenum Press, New York 1987

Authors and Affiliations

  • F. Kuchar
    • 1
  • Z. Wasilewski
    • 2
  • R. A. Stradling
    • 3
  • R. J. Wagner
    • 4
  1. 1.Inst.f.FestkörperphysikUniversity and L.Boltzmann-InstitutViennaAustria
  2. 2.High Pressure Research CenterWarsawPoland
  3. 3.Physics DepartmentImperial CollegeLondonEngland
  4. 4.Naval Research LaboratoryUSA

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