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Part of the book series: NATO ASI Series ((NSSB,volume 152))

Abstract

Heterostructures of the IV-VI compounds PbTe/Pb1-xSnxTe have been used for a number of years to produce efficient tunable laser diodes in the mid-infrared region of the electromagnetic spectrum. Either liquid phase epitaxy (LPE), hot-wall epitaxy(HWE) or molecular beam epitaxy (MBE) have been used to grow double hetero junction lasers (Preier, 1979) . Recently, also PbTe/PbSnTe multiquantum well (MQW) lasers for pulsed operation at 6 µm and temperatures up to about 200 K were fabricated. Together with other single or multiquantum well systems like e.g. PbEuSeTe/PbTe (Partin, 1984) the laser characteristics obtained, make these devices attractive for long wavelength fiber optic sensor/communication systems (Partin, 1985a,Ishida et al., 1986).

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© 1987 Plenum Press, New York

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Bauer, G., Kriechbaum, M. (1987). Properties of PbTe/Pb1-xSnxTe Superlattices. In: Sotomayor Torres, C.M., Portal, J.C., Maan, J.C., Stradling, R.A. (eds) Optical Properties of Narrow-Gap Low-Dimensional Structures. NATO ASI Series, vol 152. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1879-8_10

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  • DOI: https://doi.org/10.1007/978-1-4613-1879-8_10

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-9047-6

  • Online ISBN: 978-1-4613-1879-8

  • eBook Packages: Springer Book Archive

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