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Magnetic Properties of Donors and Acceptors in Silicon: Similarities and Differences

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Disordered Semiconductors

Part of the book series: Institute for Amorphous Studies Series ((IASS))

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Abstract

We summarize experimental results we have obtained for the susceptibility and non-linear magnetization of insulating n-type and p-type silicon. The behavior of donors and of acceptors is found to be quite similar, and agrees with predictions of the scaling theory of Bhatt and Lee. We also present and discuss some interesting differences which are not yet fully understood.

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© 1987 Plenum Press, New York

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Roy, A., Levy, M., Turner, M., Sarachik, M.P., Isaacs, L.L. (1987). Magnetic Properties of Donors and Acceptors in Silicon: Similarities and Differences. In: Kastner, M.A., Thomas, G.A., Ovshinsky, S.R. (eds) Disordered Semiconductors. Institute for Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1841-5_9

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  • DOI: https://doi.org/10.1007/978-1-4613-1841-5_9

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-9028-5

  • Online ISBN: 978-1-4613-1841-5

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