Localization Effects in Amorphous Semiconductors
On the basis of recently developed theories of transport and optical properties of amorphous semiconductors the question is discussed whether localization effects manifest themselves in the transport and optical data of these materials. It is argued that strong static disorder is responsible for the fact that quite generally Q0 ≈ 10, where Q0 is the intercept of Q = ln(σΩcm) + |eS/k| vs. T−1. On the other hand, optical properties, matrix elements in particular, are hardly influenced by localization.
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