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Localization Effects in Amorphous Semiconductors

  • U. Dersch
  • P. Thomas
Part of the Institute for Amorphous Studies Series book series (IASS)

Abstract

On the basis of recently developed theories of transport and optical properties of amorphous semiconductors the question is discussed whether localization effects manifest themselves in the transport and optical data of these materials. It is argued that strong static disorder is responsible for the fact that quite generally Q0 ≈ 10, where Q0 is the intercept of Q = ln(σΩcm) + |eS/k| vs. T−1. On the other hand, optical properties, matrix elements in particular, are hardly influenced by localization.

Keywords

Matrix Element Fermi Level Spectral Function Transport Theory Transport Data 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1987

Authors and Affiliations

  • U. Dersch
    • 1
  • P. Thomas
    • 1
  1. 1.Fachbereich PhysikPhilipps-UniversitätMarburgF. R. Germany

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