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Preparation of a-Si and its Related Materials by Hydrogen Radical Enhanced CVD

  • Chapter
Disordered Semiconductors

Abstract

A novel method of preparing a-Si and its related materials from fluorides, i.e., Hydrogen Radical Enhanced CVD (HRCVD), is proposed. This method is based on control over the chemistry both in the gas phase and in the growing surface with the aid of hydrogen atoms.

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© 1987 Plenum Press, New York

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Hanna, Ji., Shibata, N., Fukuda, K., Ohtoshi, H., Oda, S., Shimizu, I. (1987). Preparation of a-Si and its Related Materials by Hydrogen Radical Enhanced CVD. In: Kastner, M.A., Thomas, G.A., Ovshinsky, S.R. (eds) Disordered Semiconductors. Institute for Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1841-5_48

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  • DOI: https://doi.org/10.1007/978-1-4613-1841-5_48

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-9028-5

  • Online ISBN: 978-1-4613-1841-5

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