Defects in a-Si:H

  • K. Morigaki
  • M. Yamaguchi
  • I. Hirabayashi
  • R. Hayasi
Part of the Institute for Amorphous Studies Series book series (IASS)

Abstract

Defects in a-Si:H play an important role in its electronic properties, because they give rise to gap states acting as either trapping centres or recombination centres. However, our knowledge on them are still lacking. In this article we discuss the nature of some defects in a-Si:H, particularly deep gap states and light-induced ESR(LESR) centres1 exhibiting ESR of g-values either g=2.004 or g=2.013 in undoped a-Si:H as well as similar centres in doped a-Si:H. In the following section, before describing the detail of those defect centres, we briefly mention about our view of tail- and gap-states in a-Si:H.2 We present some evidence that some of deep gap states are correlated with nitrogen impurities and discuss their role in photoinduced phenomena as well as their microscopic nature. We discuss the nature of LESR centres in undoped a-Si:H as well as those of similar centres and other defects in doped a-Si:H in the light of our recent ESR and ODMR measurements.

Keywords

Phosphorus Argon Recombination 

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Copyright information

© Plenum Press, New York 1987

Authors and Affiliations

  • K. Morigaki
    • 1
  • M. Yamaguchi
    • 1
  • I. Hirabayashi
    • 1
  • R. Hayasi
    • 2
  1. 1.Institute for Solid State PhysicsUniversity of TokyoRoppongi, Minato-ku, Tokyo 106Japan
  2. 2.Department of ElectronicsThe Saitama Institute of TechnologyOkabe, Osato-gun SaitamaJapan

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