Abstract
A general problem for the understanding of the properties of localized defect states in the gap of semiconductors is the question of electron correlation. Usually, the influence of correlation effects on the energy-levels of a localized gap state is expressed in terms of the effective correlation energy, Ueff, which describes the difference in total electronic energy due to occupation of the same defect state by one or two electrons:
where D denotes a localized defect and the upper index represents the electron occupation number, n=0, 1, or 2.
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This is only true in the limit of a correlation energy, Ueff, which is large compared to the defect band width, ΔED. If Ueff / ΔED, the maximum spin density is given by Ns, max = ∫Emax+U/2 Emax-U/2 N(E)dE = ND Ueff / ΔED, where N(E) is the broad defect spectrum, and Emax is the energy at which N(E) is maximal.
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M. Stutzmann, to be published.
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© 1987 Plenum Press, New York
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Stutzmann, M., Jackson, W.B., Street, R.A., Biegelsen, D.K. (1987). Electron Correlation Energies in Hydrogenated Amorphous Silicon. In: Kastner, M.A., Thomas, G.A., Ovshinsky, S.R. (eds) Disordered Semiconductors. Institute for Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1841-5_45
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