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Optical Determination of the Fundamental Energy Gap of Amorphous MoS3

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Disordered Semiconductors

Part of the book series: Institute for Amorphous Studies Series ((IASS))

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Abstract

The fundamental energy gap of amorphous MoS3 has been determined for the first time from a study of the absorption (1.24 ± 0.05 eV) and electrolyte electroreflectance (1.30 ± 0.05 eV) spectra of thin films prepared by an electrodeposition procedure. This is also the first report of thin films of this amorphous material.

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References

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Author information

Authors and Affiliations

  1. Physics Department, Brooklyn College of CUNY, 11210, Brooklyn, NY, USA

    R. N. Bhattacharya, C. Y. Lee & Fred H. Pollak

  2. Chemistry Department, Polytechnic University, 11201, Brooklyn, NY, USA

    D. M. Schleich

  3. Physics Department, Graduate School and University Center, City University of New York, 10036, New York, USA

    C. Y. Lee & Fred H. Pollak

Authors
  1. R. N. Bhattacharya
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  2. C. Y. Lee
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  3. Fred H. Pollak
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  4. D. M. Schleich
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Editor information

Editors and Affiliations

  1. Massachusetts Institute of Technology, Cambridge, Massachusetts, USA

    Marc A. Kastner

  2. AT&T Bell Laboratories, Murray Hill, New Jersey, USA

    Gordon A. Thomas

  3. Energy Conversion Devices, Inc., Troy, Michigan, USA

    Stanford R. Ovshinsky

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© 1987 Plenum Press, New York

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Bhattacharya, R.N., Lee, C.Y., Pollak, F.H., Schleich, D.M. (1987). Optical Determination of the Fundamental Energy Gap of Amorphous MoS3 . In: Kastner, M.A., Thomas, G.A., Ovshinsky, S.R. (eds) Disordered Semiconductors. Institute for Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1841-5_27

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  • DOI: https://doi.org/10.1007/978-1-4613-1841-5_27

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-9028-5

  • Online ISBN: 978-1-4613-1841-5

  • eBook Packages: Springer Book Archive

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