Abstract
The metal-oxide-semiconductor field-effect transistor (MOSFET) is the most important device for very-large-scale integrated circuits such as microprocessors and semiconductor memories. MOSFET is also becoming an important power device. Because the current in a MOSFET is transported predominantly by carriers of one polarity only (e.g., electrons in an n-channel device), the MOSFET is referred to as a unipolar device. Although MOSFETs have been made with various semiconductors such as Ge, Si, GaAs, and use various insulators such as SiO2, Si3N4, and Al2O3, the most important system is the Si-SiO2 combination [15].
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© 1988 Kluwer Academic Publishers
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Divekar, D. (1988). Mosfet Models. In: FET Modeling for Circuit Simulation. The Kluwer International Series in Engineering and Computer Science, vol 48. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1687-9_5
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DOI: https://doi.org/10.1007/978-1-4613-1687-9_5
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4612-8952-4
Online ISBN: 978-1-4613-1687-9
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