Statistical Process Simulation
In the last chapter we indicated that yield maximization methods, which take into account inherent fluctuations in the IC manufacturing process, must be supported by statistical process and device simulation. It will also be demonstrated in the following chapters of this book that such simulation is a necessary ingredient not only for circuit design but also for process and device development, as well as IC process diagnosis and control. This chapter describes the statistical process and device simulator FABRICS , which can mimic the stochastic nature of the manufacturing process. This simulator is based on concepts first proposed in , and then in [61, 65] and . FABRICS consists of two major parts: a process simulator and a device simulator. The models implemented in FABRICS allow for the statistical simulation of typical semiconductor devices manufactured by a variety of fabrication processes.
KeywordsThreshold Voltage Process Engineer Device Model Device Simulator Impurity Profile
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- 1.This section is based upon the paper ▪Statistical Simulation of IC Manufacturing Process▪ by W. Maly and A.J. Strojwas, IEEE Trans. on CARD, July 1982, Vo. CAD-1, No. 3, pp. 120-131Google Scholar
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