Abstract
The accuracy of the Philips compact MOS model, MOS MODEL 9, has been investigated for a number of quantities, that are important for RF circuit design. On-wafer S-parameter measurements have been performed on MOS devices as a function of the frequency up to the GHz-range. From these S-parameters important RF quantities such as input impedance, transconductance, current and voltage gain etc., have been obtained. A comparison between experimental results and model calculations will be presented.
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Klaassen, D.B.M., Nauta, B., Vanoppen, R.R.J. (2001). RF modelling of MOSFETs. In: Sansen, W., van de Plassche, R.J., Huijsing, J.H. (eds) Analog Circuit Design. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1443-1_1
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DOI: https://doi.org/10.1007/978-1-4613-1443-1_1
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