Abstract
This lecture* is intended to describe some of the structures being built to achieve quasi-one-dimensional behavior of electrons in semiconductors and some of the methods being used to calculate energy levels and charge densities for such structures. No attempt is made to describe the growing body of theoretical and experimental work on optical and transport properties. A basic knowledge of heterostructure physics, as presented in other lectures in this volume, is presupposed.
This is a preview of subscription content, log in via an institution to check access.
Preview
Unable to display preview. Download preview PDF.
References
T. Ando, A. B. Fowler, and F. Sternr, Electronic properties of two- dimensional systems, Rev, Mod. Phys. 54:437 (1982).
A. B. Fowler, A. Hartstein and R. A. Webb, Conductance in restricted-dimensionality accumulation layers, Phys. Rev. Lett. 48:196 (1982).
C. C. Dean and M. Pepper, The transition from two- to one-dimensional electronic transport in narrow silicon accumulation layers, J. Phys. C 15:L1287 (1982).
T. J. Thornton, M. Pepper, H. Ahmed, D. Andrews and G. J. Davics, One-dimensional conduction in the 2D electron gas of a GaAs-Al-GaAs heterojunction, Phys. Rev. Lett. 56:1198 (1986).
H. Z. Zheng, H. P. Wei, D. C. Tsui, and G. Weimann, Gate-controlled transport in narrow GaAs/AlxGa1-xAs heterostructures, Phys. Rev. B 34:5635 (1986).
M. Frei, D. C. Tsui and G. Weimann, Gate-controlled one-dimensional transport in high-mobility GaAs/AlGaAs heterostructures, Bull. Am. Phys. Soc. 32:889 (1987).
A. C. Warren, D. A. Antoniadis and H. I. Smith, Quasi one-dimensional conduction in multiple, parallel inversion lines, Phys. Rev. Lett. 56:1858 (1986).
R. G. Wheeler, K. K. Choi and R. Wisnieff, Quasi-one-dimensional effects in submicron width silicon inversion layers, Surf. Sci. 142:19 (1984).
R. F. Kwasnick, M. A. Kastner, J. Melngailis and P. A. Lee, Nonmonotonic variations of the conductance with electron density in ~70-nm-wide inversion layers, Phys. Rev. Lett. 52:224 (1984).
W. J. Skocpol, L. D. Jackel, E. L. Hu, R. E. Howard and L. A. Fetter, One-dimensional localization and interaction effects in narrow (0.1-µm) silicon inversion layers, Phys. Rev. Lett. 49:951 (1982).
W. J. Skocpol, L. D. Jackel, R. E. Howard, H. G. Craighead, L. A. Fetter, P. M. Mankiewich, P. Grabbe and D. M. Tennant, Magneto-conductance and quantized confinement in narrow silicon inversion layers, Surf. Sci. 142:14 (1984).
H. van Houten, B. J. van Wees, M. G. J. Heijman and J. P. Andre, Submicron conducting channels defined by shallow mesa etch in GaAs-AlGaAs heterojunctions, Appl. Phys. Lett. 49:1781 (1986).
K. K. Choi, D. C. Tsui and K. Alavi, Experimental determination of the edge depletion width of the two-dimensional electron gas in GaAs/AlxGa1-xAs, Appl. Phys. Lett. 50:110 (1987).
M. A. Reed, R. T. Bate, K. Bradshaw, W. M. Duncan, W. R. Frensley, J. W. Lee and H. D. Shih, Spatial quantization in GaAs-AlGaAs multiple quantum dots, J. Vac. Sci. Technol. B 4:358 (1986).
K. Kash, A. Scherer, J. M. Worlock, H. G. Craighead and M. C. Tamargo, Optical spectroscopy of ultrasmall structures etched from quantum wells, Appl. Phys. Lett. 49:1043 (1986).
H. Sakaki, Scattering suppression and high-mobility effect of size-quantized electrons in ultrafine semiconductor wire structures, Jpn. J. Appl. Phys. 19:L735 (1980).
P. M. Petroff, A. C. Gossard, R. A. Logan, and W. Wiegmann, Toward quantum well wires: Fabrication and optical properties, Appl. Phys. Lett. 49:1275 (1986).
Y. C. Chang, L. L. Chang, and L. Esaki, A new one-dimensional quantum well structure, Appl. Phys. Lett. 47:1324 (1985).
J. Cibert, P. M. Petroff, G. J. Dolan, S. J. Pearton, A. C. Gossard and J. H. English, Optically detected carrier confinement to one and zero dimensions in GaAs quantum well wires and boxes, Appl. Phys. Lett. 49:1275 (1986).
H. Temkin, G. J. Dolan, M. B. Panish and S. W. G. Chu, Low-temperature photoluminescence from InGaAs/InP quantum wires and boxes, Appl. Phys. Lett. 50:413 (1987).
P. F. Maldague, One-dimensional behavior in narrow-gate silicon MOS devices, Bull. Am. Phys. Soc. 26:787 (1981).
A. Ya. Shik, Calculations relating to a semiconductor structure with a quasione-dimensional electron gas, Fiz. Tekh. Poluprovodn. 19:1488 (1985) [Sov. Phys. Semicond. 19:915 (1985)].
A. C. Warren, D. A. Antoniadis, and H. I. Smith, Semi-classical calculation of charge distributions in ultra-narrow inversion lines, IEEE Electron Dev. Lett. EDL-7:413 (1986).
W. Y. Lai and S. Das Sarma, Ground-state variational wave function for the quasi-one-dimensional semiconductor wire, Phys. Rev. B 33:8874 (1986).
J. A. Brum, G. Bastard, L. L. Chang and L. Esaki, Energy levels in some quasi uni-dimensional semiconductor heterostructures, in: “Proceedings of the 18th International Conference on the Physics of Semiconductors,” Vol. 1, p. 396, World Scientific, Singapore (1987).
J. A. Brum, G. Bastard, L. L. Chang and L. Esaki, Energy levels in quasi uni-dimensional semiconductor heterostructures, Superlattices and Microstructures 3:47 (1987).
S. E. Laux and F. Stern, Electron states in narrow gate-induced channels in Si, Appl. Phys. Lett. 49:91 (1986).
S. E. Laux and A. C. Warren, Self-consistent calculation of electron states in narrow channels, Technical Digest of International Electron Devices Meeting, Los Angeles, December, 1986, p. 567.
S. E. Laux, Numerical methods for calculating self-consistent solutions of electrons states in narrow channels, NASECODE V: The Fifth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, Dublin, June, 1987 (to be published by Boole Press, Dublin).
S. E. Laux, D. J. Frank and F. Stern, Quasi-one-dimensional electron states in a split-gate GaAs-AlGaAs heterostructure, Seventh International Conference on Electronic Properties of Two-Dimen-sional Systems, Santa Fe, July, 1987 (to be published in Surf.Sci.).
D. A. Poole, M. Pepper, K.-F. Berggren, G. Hill and H. W. Myron, Magneto-resistance oscillations and the transition from three-dimensional to two-dimensional conduction in a gallium arsenide field effect transistor at low temperatures, J. Phys. C 15:L21 (1982).
K.-F. Berggren, T. J. Thornton, D. J. Newson and M. Pepper, Magnetic depopulation of 1D subbands in a narrow 2D electron gas in a GaAs:AlGaAs heterojunction, Phys. Rev. Lett. 57:1769 (1986).
K. B. Wong, M. Jaros and J. P. Hagon, Confined electron states in GaAs-Ga1-xAlxAs quantum wires, Phys. Rev. B 35:2463 (1987).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1988 Plenum Press, New York
About this chapter
Cite this chapter
Stern, F. (1988). Electronic Structure of Laterally Restricted Systems. In: Leavens, C.R., Taylor, R. (eds) Interfaces, Quantum Wells, and Superlattices. NATO ASI Series, vol 179. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1045-7_6
Download citation
DOI: https://doi.org/10.1007/978-1-4613-1045-7_6
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4612-8307-2
Online ISBN: 978-1-4613-1045-7
eBook Packages: Springer Book Archive