Abstract
X- and K-band ESR data are presented of a SIMOX structure fabricated by implanting [001] n-type c-Si with 1.7 x10180+cm-2 at an energy of 170 keV. The report focusses on three signals. A first one, with g ≃ 2.070 is due to interstitial Fe impurities probably introduced as a result of 0+ implantation. A second anisotropic signal of \(\textup{g}(\overline{B}||\;\;[001]\;;\;4.3\;\;\textup{K}) = 1.99963\) reveals the presence of P piling up; c-Si regions of effective P concentration ∼ 1.2 xl019cm-3 are present in the bulk of the SIMOX sample. A third isotropic signal of g = 1.9983 is tentatively identified as a thermal donor. The observations are discussed in the light of the formation of internal Si/SiO2 structures.
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© 1988 Plenum Press, New York
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Stesmans, A., Van Gorp, G. (1988). Low-Temperature ESR Study of SIMOX Structures. In: Devine, R.A.B. (eds) The Physics and Technology of Amorphous SiO2 . Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1031-0_65
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DOI: https://doi.org/10.1007/978-1-4613-1031-0_65
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