The Role of Hole Traps in the Degradation of Thermally Grown SiO2 Layers

  • M. M. Heyns
  • R. F. De Keersmaecker


Due to the high fields present in small-geometry metal-oxide-semiconductor (MOS) transistors charge injection into the gate oxide can readily occur leading to serious reliability problems related to the degradation of the SiO2 layer and of the Si/SiO2 interface. It is therefore extremely important to have a thorough understanding of the degradation mechanisms occurring upon charge injection.


Capture Cross Section Charge Injection Hole Trap Slow State Hole Trapping 
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Copyright information

© Plenum Press, New York 1988

Authors and Affiliations

  • M. M. Heyns
    • 1
  • R. F. De Keersmaecker
    • 1
  1. 1.Interuniversity Microelectronics Center (IMEC vzw)LeuvenBelgium

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