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Influence of Different Preparation Methods on Interfacial (SiO2/Si) Parameters of Very Thin SiO2 Layers

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The Physics and Technology of Amorphous SiO2

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Abstract

Very thin Silicon dioxide layers (thickness less than 100 Ä) have a growing importance for the VLSI integrated circuits. Indeed they are used in EEPROM (memories) and in a variety of bistable devices (as the MISS for example). Besides they could be used as intermediate dielectric tunnel layers serving to enhance injection in Schottky contacts for bipolar circuit applications.

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References

  1. G. Pananakakis, G. Kamarinos, M. El-Sayed, Solid. St, Electron, 26:415 (1983).

    Article  CAS  Google Scholar 

  2. F. Gaspard, A. Halimaoui, G. Sarrabayrouse, Revue Phys. Appl., 22:65 (1987).

    CAS  Google Scholar 

  3. J.L. Prom, F. Rossel, C. Solano, T. Doconto, G. Sarrabayrouse, Journées GCIS, 18–19 Mai 1987, Toulouse.

    Google Scholar 

  4. G. Pananakakis, G. Kamarinos, Surface Science, 168:657 (1980).

    Article  Google Scholar 

  5. E.H. Nicollian, A. Goetzberger, The Bell System J., XLVI:1055 (1967).

    Google Scholar 

  6. M. El-Sayed, G. Pananakakis, G. Kamarinos, Solid. St. Electron, 28:345 (1985).

    Article  CAS  Google Scholar 

  7. T.C. Poom, H.C. Card, J. Appl. Phys., 51:6273 (1980).

    Article  Google Scholar 

  8. C.N. Berglund, IEEE Trans., ED-13:701 (1966).

    Google Scholar 

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Author information

Authors and Affiliations

  1. Laboratoire de Physique des Composants à Semiconducteur ENSERG/INP-G, 23 Avenue des Martyrs, 38031, Grenoble cédex, France

    Georges Pananakakis, Panagiota Morfouli & Georges Kamarinos

Authors
  1. Georges Pananakakis
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  2. Panagiota Morfouli
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  3. Georges Kamarinos
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Editor information

Editors and Affiliations

  1. National Center for Telecommunications Studies, Meyland, France

    Roderick A. B. Devine

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© 1988 Plenum Press, New York

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Pananakakis, G., Morfouli, P., Kamarinos, G. (1988). Influence of Different Preparation Methods on Interfacial (SiO2/Si) Parameters of Very Thin SiO2 Layers. In: Devine, R.A.B. (eds) The Physics and Technology of Amorphous SiO2 . Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1031-0_40

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  • DOI: https://doi.org/10.1007/978-1-4613-1031-0_40

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-8301-0

  • Online ISBN: 978-1-4613-1031-0

  • eBook Packages: Springer Book Archive

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