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The Influence of Disorder on the Si2p XPS Lineshape at the Si — SiO2 Interface

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The Physics and Technology of Amorphous SiO2

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Abstract

The origins of X ray photoelectron spectroscopy Si2p core level lineshapes and lineshifts in thermally grown SiO2 on Si are discussed. It is demonstrated that photoelectron lineshapes are related to bridging bond angle distributions through convolutions which result in linewidths being substantially narrower than initially expected. We conclude, by comparison with experiment, that broadening effects are present in SiO2 Si2p experimental spectra which mask the intrinsic linewidth expected from bond angle distribution arguments.

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Author information

Authors and Affiliations

  1. CNET, BP98, 38243, Meylan, France

    R. A. B. Devine

  2. Petrographisch-Mineralogisches Institut, Universität Tübingen, D-7400, Tübingen, Germany

    J. Arndt

Authors
  1. R. A. B. Devine
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  2. J. Arndt
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Editor information

Editors and Affiliations

  1. National Center for Telecommunications Studies, Meyland, France

    Roderick A. B. Devine

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© 1988 Plenum Press, New York

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Devine, R.A.B., Arndt, J. (1988). The Influence of Disorder on the Si2p XPS Lineshape at the Si — SiO2 Interface. In: Devine, R.A.B. (eds) The Physics and Technology of Amorphous SiO2 . Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1031-0_37

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  • DOI: https://doi.org/10.1007/978-1-4613-1031-0_37

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-8301-0

  • Online ISBN: 978-1-4613-1031-0

  • eBook Packages: Springer Book Archive

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