Advertisement

The Pb Center at the Si-SiO2 Precipitate Interfaces in Buried Oxide Materials: 29Si Hyperfine Interactions and Linewidths

  • W. E. Carlos

Abstract

Electron Spin Resonance (ESR) has recently been very successfully applied to the problem of thermal oxide — Si interfaces1–3. That work resulted in the identification of the Pb center as the primary fast interface trap and the determination that its basic structure is a trivalent Si atom at the Si-SiO2 interface. In addition to the technological motivations, there is also fundamental interest in this defect, which is at the interface between a crystalline solid and an amorphous one, and, therefore, might be expected to have features characteristic of defects in both types of materials. The detailed ESR study of the structure of this defect is inhibited by the small fraction of interfacial atoms in a typical Si-SiO2 structure. It has recently been shown that the principal paramagnetic defect observed in silicon on insulator materials formed by oxygen implantation is a Pb center at the interface between Si and SiO2 precipitates in the Si film over the buried oxide layer4–6. The total precipitate surface area can be much greater than the simple surface area of an Si-SiO2 structure. This increased number of “interfacial” atoms affords the opportunity to conduct more detailed ESR studies of the Pb center than readily possible with Si-thermal oxide structures. In addition these interfaces are formed in a significantly different manner than the thermal oxide interfaces and a comparison of the Pb centers formed in the two manners may offer insights into their formation.

Keywords

Electron Spin Resonance Electron Spin Resonance Spectrum Thermal Oxide Spin Hamiltonian Parameter Electron Spin Resonance Signal Intensity 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    E.H. Poindexter, P.J. Caplan, B.E. Deal and R.R. Razouk, J. Appl. Phys. 52:879 (1981). E.H. Poindexter, G.J. Geradi, P.J. Caplan; N.M. Johnson and D.K. Biegelsen, J. Appl. Phys. 56:2844 (1984).CrossRefGoogle Scholar
  2. 2.
    P.M. Lenahan and P.V. Dressendorfer, J. Appl. Phys. 55:3495 (1984).CrossRefGoogle Scholar
  3. 3.
    K.L. Brower, Appl. Phys. Lett. 43:1111 (1983).CrossRefGoogle Scholar
  4. 4.
    R.C. Barklie, A. Hobbs, P.L.F. Hemment and K. Reeson, J. Phys. C 19:6417 (1986).Google Scholar
  5. 5.
    T. Makino and J. Takanashi, Appl. Phys. Lett. 50:267 (1987).CrossRefGoogle Scholar
  6. 6.
    W.E. Carlos, Appl. Phys. Lett. 50:1450 (1987).CrossRefGoogle Scholar
  7. 7.
    P.L.F. Hemment, Mat. Res. Soc. Symp. Proc. 53:207 (1986); H.L. Lam and R.P. Pinizzotto, J. Crystal Growth, 63, 554 (1983).CrossRefGoogle Scholar
  8. 8.
    G.D. Watkins and J.W. Corbett, Phys. Rev. 134:A1359 (1964).CrossRefGoogle Scholar
  9. 9.
    K.L. Brower and T.J. Headley, Phys. Rev. B34:3610 (1986).Google Scholar
  10. 10.
    M. Cook and C.T. White, Phys. Rev. Lett, (in press).Google Scholar
  11. 11.
    K.L. Brower, Phys. Rev. B33:4471 (1986).Google Scholar
  12. 12.
    A. Abragam, “The Principles of Nuclear Magnetism”, Oxford University Press, London, (1961), chapter 3.Google Scholar
  13. 13.
    R. Haight and L.C. Feldman, J. Appl. Phys. 53:4484 (1982).CrossRefGoogle Scholar
  14. 14.
    K.L. Brower, Z. Phys. Chem. 151:177 (1987).CrossRefGoogle Scholar
  15. 15.
    D.L. Griscom, E.J. Friebele, G.H. Sigel, Jr., Solid State Commun. 15: 479 (1974).CrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1988

Authors and Affiliations

  • W. E. Carlos
    • 1
  1. 1.Naval Research LaboratoryWashington DCUSA

Personalised recommendations