Abstract
The common silicon dopants B, P and As tend to be incorporated in SiO2 as network formers, i.e. they will attempt to occupy Si sites in the glassy oxide structure. The present study deals with dopants introduced by ion implantation. Since the amount of oxygen is not sufficient to fulfill the bonding requirements of silicon and the dopant the implantation process leaves an oxygen deficient system. Annealing in an O2-free ambiant will restore the bonding in the network but will not affect this deficiency. The latter is only possible by an O2 treatment. Consequently, the oxide will have a different defect structure in the two cases. In the present paper we will review data on diffusion, XPS, IR absorption and electron trapping studies supporting this model.
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© 1988 Plenum Press, New York
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Offenberg, M., Grunthaner, P.J., Krut, D.D., Balk, P. (1988). The Structure of Defects in Doped SiO2 . In: Devine, R.A.B. (eds) The Physics and Technology of Amorphous SiO2 . Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1031-0_30
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DOI: https://doi.org/10.1007/978-1-4613-1031-0_30
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