Abstract
An important cause of ionizing radiation induced degradation in MOS integrated circuit devices is the buildup of trapped positive charge in gate and field oxides1. Recent electron paramagnetic resonance (EPR) studies2 have identified virtually all trapping sites in the oxides as E′ centers (paramagnetic bridging oxygen vacancies). The formation of these vacancies during irradiation by energetic photons or electrons is predominantly by ionization processes3, i.e., bond rearrangements after electron-electron collisions, rather than displacements from electron-atom collisions.
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© 1988 Plenum Press, New York
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Pfeffer, R.L. (1988). Transformation of Radiation Induced Defect Centers as a Probe of Molecular Diffusion in a-SiO2 . In: Devine, R.A.B. (eds) The Physics and Technology of Amorphous SiO2 . Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1031-0_23
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DOI: https://doi.org/10.1007/978-1-4613-1031-0_23
Publisher Name: Springer, Boston, MA
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