Self-Trapped Excitons in Amorphous and Crystalline SiO2
Properties of the self-trapped excitons in amorphous and crystalline SiO2 studied through transient volume and optical absorption change and luminescence are compared. It is emphasized that local lattice relaxation induced upon electronic excitation in crystalline and amorphous materials is similar except that the time decay of the self-trapped excitons in the amorphous is non-exponential. Based on the fact that the self-trapped exciton in crystalline SiO2 is a close vacancy-interstitial pair, we propose a new mechanism for the luminescence in amorphous SiO2 exhibiting a non-exponential time decay.
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- 1.R. Fisher, “Amorphous Semiconductors”, ed. M.H. Brodsky Springer Verlag, Berlin, (1985) p. 159.Google Scholar
- 2.D.L. Griscom, Proceedings of the Thirty-Third Frequency Control Symposium (Electronic Industries Association, 1979). p. 98.Google Scholar
- 3.T. Tanaka, T. Eshita, K. Tanimura and N. Itoh, Crystal Lattice Defects and Amorphous Materials 11:221 (1985).Google Scholar
- 4.L. H. Robins and M.A. Kastner, Phil. Mag. B 50:29 (1984).Google Scholar
- 6.W. Hayes, M.J. Kane, O. Salminen, R.L. Wood and S.P. Doherry, J. Phys. C17:2943 (1984).Google Scholar
- 7.K. Tanimura and L.E. Haliburton, Phys. Rev. B 34:2933 (1986).Google Scholar
- 8.C. Itoh, K. Tanimura and N. Itoh, to be published.Google Scholar
- 9.K. Tanimura, C. Itoh and N. Itoh, to be published.Google Scholar
- 10.K.L. Yip and W.B. Fowler, Phys. Rev. B 11:2327 (1975).Google Scholar
- 13.D. Emin, “Proceedings 7th International Conference on Amorphous and Liquid Semiconductors” ed. W.E. Spear, Edinburg, (1977) P. 261.Google Scholar
- 14.N. F. Mott and A.M. Stoneham, J. Phys. C 10:3391 (1977).Google Scholar
- 15.R. A. Street, Phys. Rev. B 17:3984 (1978).Google Scholar
- 16.G. A. Higashi and M. Kastner, Phys. Rev. B 24:2295 (1981).Google Scholar