Abstract
Boron is a common dopant in silicon technology, its implantation is frequently used in MOS VLSI circuit fabrication. In this way some atoms can be located in the SiO2. An interesting question is how boron can be incorporated into the SiO2 network and whether the presence of implanted boron can create electron and/or hole trapping centers.
This work is partially sponsored within Central Project of Basic Research CPBP 01.08E3.5.
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© 1988 Plenum Press, New York
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Marczewski, M., Strzalkowski, I., Baranowski, J. (1988). Boron Impurity Centers in SiO2 a Tight Binding Consideration. In: Devine, R.A.B. (eds) The Physics and Technology of Amorphous SiO2 . Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1031-0_14
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DOI: https://doi.org/10.1007/978-1-4613-1031-0_14
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