Abstract
An oxygen vacancy is one of the most fundamental defects in SiO2. It influences many physical properties of silicon dioxide, e.g. charge trapping. Therefore a detailed knowledge of microscopy and chemical bonding of this defect is essential in understanding the physics of many problems in SiO2.
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J.M. Baranowski, I. Strzalkowski, M. Marcezewski and M. Kowalski, “6th General Conference of the CMD of the EPS”, Stockholm, Europhysics Conference Abstracts, 10a:242 (1986).
J.M. Baranowski, I. Strzalkowski, M. Marcezewski and M. Kowalski, in press in J. Appl. Phys. (1987).
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© 1988 Plenum Press, New York
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Strzalkowski, I. (1988). Electron and Hole Traps Related to A π-Bonded Oxygen Vacancy Center in SiO2 . In: Devine, R.A.B. (eds) The Physics and Technology of Amorphous SiO2 . Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1031-0_11
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DOI: https://doi.org/10.1007/978-1-4613-1031-0_11
Publisher Name: Springer, Boston, MA
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