Abstract
The electronic structure, local bonding and reactions of the principal intrinsic point defects and some impurities (H2O, H, B, N, Ga, Ge, P, As) in amorphous silicon dioxide are reviewed.
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© 1988 Plenum Press, New York
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Robertson, J. (1988). Electronic Structure of Defects in Amorphous SiO2 . In: Devine, R.A.B. (eds) The Physics and Technology of Amorphous SiO2 . Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1031-0_10
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DOI: https://doi.org/10.1007/978-1-4613-1031-0_10
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