Abstract
Conventional positron moderators rely on diffusion to transport a small proportion of e+ implanted from a radioactive source to a surface where they may be emitted into vacuum with an energy distribution peaked at a value characteristic of the negative workfunction of that material. The energy spread of the distribution will depend on the e+ properties in the bulk and at the surface of the moderating material. Since the initial conception of a positron moderator by Madanski and Resettil and the first practical demonstration by Cherry2 in 1958 there has been considerable improvement in conversion efficiencies. Of particular significance was the work of Mills who showed that many clean metal surfaces emit slow positrons and was thus able to develop higher efficiency moderators4. The factors which govern the suitability of a particular material for use as a positron moderator are given in the following empirical relationship for the moderator efficiency, p1,5,
where yo is the probability of slow positron emission from the surface (the branching ratio), α is the β+ absorption coefficient and \(\sqrt {D\tau }\) the e+ diffusion coefficient with D and τ the positron diffusion constant and lifetime respectively. To maximise these factors, recently work has largely concentrated on dense single crystal materials especially W(110) for which an effi-ciency of 3.2 × 10−6 has been reported6.
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References
L. Madanski and F. Rasetti, An Attempt to Detect Thermal Energy Positrons, Phys. Rev. 79:397 (1950).
W. Cherry, Ph.D. dissertation (Princeton University 1958).
A.P. Mills, Jr., P.M. Platzman and B.L. Brown, Slow Positron Emission from Metal Surfaces, Phys. Rev. Lett. 41:1076 (1978).
A.P. Mills, Jr., Appl. Phys. Lett. 37:1980
A.P. Mills, Jr., in “Positron Solid State Physics, Proc. S.I.F. course LXXXIII”, W. Brandt and A. Dupasquier, ed. North-Holland, Amsterdam (1983). p440.
A. Vehanen, K.G. Lynn, P.J. Schultz and M. Eldrup, Improved Slow Positron Yield Using a Single Crystal W. Moderator, Appl. Phys. A32:163 (1983).
C.A. Murray, A.P. Mills, Jr., and J.E. Rowe, Correlation Between Electron and Positron Workfunctions on Copper Surfaces, Surf. Sci. 100: 647 (1980).
M. Debowska, R. Ewertoski and W. Swiatkowski, Appl. Phys. A36:47 (1985).
As Ref. 4 p.445
D.A. Fisher, K.G. Lynn and W.E. Frieze, Reemitted-Positron Energy-Loss Spectroscopy: a Novel Probe for Absorbate Vibrational Levels, Phys. Rev. Lett. 50:1149 (1983).
A.P. Mills, Jr., and E.M. Gullikson, Solid Neon Moderator for Producing Slow Positrons, to be published.
E.M. Gullikson and A.P. Mills, Jr., Positron Dynamics in Rare Gas Solids, Phys. Rev. Lett. 57:376 (1986).
K.G. Lynn and B.T.A. McKee, Some Investigations of Moderators for Slow Positron Beams, Appl. Phys. 19:247 (1979).
C.D. Beling, R.I. Simpson, M. Charlton, F. Jacobsen, T.C. Griffith, P. Moriarty and S. Fung, A Field Assisted Moderator for Low Energy Positron Beams, Appl. Phys. A42:111 (1987).
A.P. Mills, Jr. and L. Pfeiffer, Mobility of Positrons in Silicon, Phys. Lett. 63A:118 (1976).
E.J. Van Loenen, A.E.M.J. Fischer, J.F. Van der Veen and F. Legoues, High Resolution Studies of NiSi2 Ultrathin Film Formation by Ion Beam Scattering and Cross Section TEM, Surf. Sci. 154:52 (1985).
K.G. Lynn, private communication.
A.P. Mills, Jr. and C.A. Murray, Diffusion of Positrons to Surfaces Appl. Phys. 21:323 (1980).
B. Nielsen, K.G. Lynn, A. Vehanen and P.J. Schultz, Positron Diffusion in Si, Phys. Rev. B32:2296 (1985).
E.M. Gullikson, private communication.
J. Chevallier and A. Nylandsted Larsen, Epitaxial Nickel and Cobalt Silicide Formation by Rapid Thermal Annealing, Appl. Phys. A39:141 (1986).
J.F. Van der Veen, private communication.
R.T. Tung, Shottky-Barrier Formation at Single-Crystal Metal Semi-conductor Interface, Phys. Rev. Lett. 52:461 (1984).
S.M. Sze, “Physics of Semiconductor Devices”, Wiley Intersciences, New York, 2nd Ed. (1981).
G. Lang and S. De Benedetti, Angular Correlation of Annihilation Radiation in Various Substances, Phys. Rev. 108:914 (1957).
O. Sueoka and S. Koide, Poistron Mobility in Diamond, J. Phys. Soc. Japan, 41:116 (1976).
W. Brandt and R. Paulin, Positron Implantation Profile in Solids, Phys. Rev. B15:2511 (1977).
A.P. Mills, Jr. and W. Crane, Emission of Band-Gap-Energy Positrons from Surfaces of LiF, NaF and Other Ionic Crystals, Phys. Rev. Lett. 53:2165 (1984).
K.G. Lynn and B. Nielsen, comment, in Phys. Rev. Lett. 58:61 (1987).
S.D. Brorson, D.J. DiMaria, M.V. Fischetti, F.L. Pesavento, P.M. Solomon and D.W. Dong, Direct measurement of the energy distribution of hot electrons in silicon dioxide, J. Appl. Phys. 53:1302 (1985)
J. Chevallier, private communication.
J. Van House and P.W. Zitzewitz, Probing the Positron Moderation Process Using High-Intensity, Highly Polarized Slow Positron Beams, Phys. Rev. A29:96 (1984).
A.R. Green, J. Dancy and E. Bauer, Insignificance of Lattice Misfit for Epitaxy, J. Vac. Sci. Tech. 7:1 (1969).
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© 1987 Plenum Press, New York
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Beling, C.D., Simpson, R.I., Charlton, M. (1987). Field Assisted Moderators. In: Humberston, J.W., Armour, E.A.G. (eds) Atomic Physics with Positrons. NATO ASI Series, vol 169. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0963-5_14
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DOI: https://doi.org/10.1007/978-1-4613-0963-5_14
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