Spin Fluctuation Effects in Germanium Doped YbPd2Si2: LIII-Edge, Susceptibility and Resistivity Studies
Many ternary compounds with the general formula YbM2X2 (M = transition metal, X = Si and Ge) have been prepared and studied [1,2]. In these compounds, Yb can be 2+, 3+ or intermediate valence (IV) depending on the chemical composition of the alloy [3–5]. Intermediate valence in YbPd2Si2 was first reported using x-ray photoemission spectroscopy and LIII-edge absorption . The magnetic susceptibility  and Mossbauer  measurements confirmed that Yb is IV but close to 3+ valence state. Recent results on the other IV system, CeRu2Si2, showed that the Ge substitution on the Si site creates chemical pressure effects and pushes the valence of Ce closer to 3+ . The Ge substitution should lead to a decrease in the valence of Yb in YbPd2Si2. However, with small concentrations of Ge introduced in the matrix, one may except an increase in the spin fluctuation temperature, (TSF). In such a case, one should see the scaling behaviour of X4f: i.e., the Yb derived 4f susceptibility X4f(T) should scale with T/TSF as X4f∼f(T/TSF) where f is a universal function.
KeywordsMagnetic Susceptibility Intermediate Valence Chemical Pressure Effect Intermediate Valence System Spin Fluctuation Effect
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