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Positive Photoresists

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Book cover Semiconductor Lithography

Part of the book series: Microdevices ((MDPF))

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Abstract

After exposure to 150- to 800-nm radiation, positive photoresists develop more rapidly in the exposed region at a rate R which is about ten times greater than the unexposed rate, R 0. For various lithographic processing, the various preferred profiles (Table 2-1-1) are formed at different doses and R/R 0 development conditions.

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  1. General Technology Division, International Business Machines Corporation, Hopewell Junction, New York, USA

    Wayne M. Moreau

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© 1988 Plenum Press, New York

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Moreau, W.M. (1988). Positive Photoresists. In: Semiconductor Lithography. Microdevices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0885-0_2

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