Photochemical Hole Burning of Quinizarin and Tetraphenylporphin in Main-Chain Aromatic Polymers
The efficiency of hole formation and the temperature stability of holes burnt at 4.2 K by using argon-ion laser, helium-neon laser, or ring dye laser are studied for quinizarin (Q) and tetraphenylporphin (TPP) in various main-chain aromatic polymer matrices. The efficiency of hole formation for TPP in phenoxy resin (PhR) is higher than those in poly(ethylene terephthalate) (PET), polyimide (PI), poly(methyl methacrylate) (PMMA), and liquid crystalline polymer (LCP). The temperature stability of the holes was evaluated by cycle annealing experiments. In the case of TPP in phenoxy resin (PhR), the hole burnt at 4.2 K could be detected even at liquid nitrogen temperature (80 K) after 30 min annealing at the temperature. The hole burnt at 4.2 K partially recovers when cooled again to and measured at 4.2 K after cycle annealing up to 110 K for TPP in PMMA, 120 K for TPP in PhR, and 130 K for TPP in PI. The first experiment of photochemical hole burning (PHB) without using liquid helium as a refrigerant was carried out for TPP in PhR system, where we could burn and observe clear holes even at 80 and 100 K.
KeywordsEthylene Terephthalate Hole Formation Hole Depth Aromatic Polyimide Hole Width
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