A Theoretical Study of Na Overlayers on the GaAs (110) Surface
Although many efforts have been focused on gaining a microscopic understanding of the metal-semiconductor interfaces, many properties, such as the pinning of the Fermi-level, and the formation of the Schottky barrier, are still controversial. [1,2] Experimental results were affected by the interface morphology, and surface relaxation, while theoretical results suffer from proper models and a well defined reference energy.
KeywordsFermi Level Surface Atom Ideal Surface Surface Relaxation Partial Charge Transfer
Unable to display preview. Download preview PDF.
- 1.L.J. Brillson, Surf. Sci. Rep. 2, 123(1982); I. Lindau and T. Kendelewicz, CRC Critical Rev. Solid State and Mat. Sci. 13, 27 (1986).Google Scholar
- 3.For examples, C.B. Duke, A. Paton, R.J. Meyer, L.J. Brillson, A. Kahn, D. Kanani, J. Carelli, J.L. Yeh, G. Margaritondo, and A.D. Katnani, Phy. Rev. Lett. 46, 440 (1981); P. Soukiassian, and T. Kendelewicz, to appear in "Metallization and Metal-Semiconductor Interfaces" ed. by Inder P. Batra, Plenum, New York (1989).Google Scholar
- 4.M. Prietsch, M. Domke, C. Laubschat, T. Mandel, C. Xue, and G. Kaindl, Z. Phys., submitted; M. Prietsch, C. Laubschat, M. Domke, and G. Kaindl, Europhys. Lett. 6, 451(1988); C. Laubschat et al , this workshop.Google Scholar
- 5.L.H. Yang, C.Y. Fong, and Inder P. Batra, Bull. Am. Phys. Soc. 33, 571 (1988).Google Scholar
- 6.See for example, Inder P. Batra, Prog, in Surf. Sci. 25, 175 (1987).Google Scholar
- 8.J. Ihm, A. Zunger, and M.L. Cohen, J. Phys. C12, 4409 (1979); erratum J. Phys. C13, 3095 (1980).Google Scholar
- 10.C. Mailhiot, C.B. Duke, and D.J. Chadi, Surf. Sci. 149, 366 (1985); G.X. Qian, R.M. Martin, and D.J. Chadi, Phys. Rev. B37, 1303 (1988).Google Scholar
- 12.J. Ihm, and J.D. Joannopoulos, Phys. Rev. Lett. 47, 679 (1981); Phys. Rev. B26, 4429 (1982).Google Scholar