A Theoretical Study of Na Overlayers on the GaAs (110) Surface

  • C. Y. Fong
  • L. H. Yang
  • Inder P. Batra
Part of the NATO ASI Series book series (NSSB, volume 195)

Abstract

Although many efforts have been focused on gaining a microscopic understanding of the metal-semiconductor interfaces, many properties, such as the pinning of the Fermi-level, and the formation of the Schottky barrier, are still controversial. [1,2] Experimental results were affected by the interface morphology, and surface relaxation, while theoretical results suffer from proper models and a well defined reference energy.

Keywords

Cove Rage GaAs Nism Chemisorption Mandel 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    L.J. Brillson, Surf. Sci. Rep. 2, 123(1982); I. Lindau and T. Kendelewicz, CRC Critical Rev. Solid State and Mat. Sci. 13, 27 (1986).Google Scholar
  2. 2.
    J. Tersoff, Phy. Rev. Lett. 52, 465 (1984).ADSCrossRefGoogle Scholar
  3. 3.
    For examples, C.B. Duke, A. Paton, R.J. Meyer, L.J. Brillson, A. Kahn, D. Kanani, J. Carelli, J.L. Yeh, G. Margaritondo, and A.D. Katnani, Phy. Rev. Lett. 46, 440 (1981); P. Soukiassian, and T. Kendelewicz, to appear in "Metallization and Metal-Semiconductor Interfaces" ed. by Inder P. Batra, Plenum, New York (1989).Google Scholar
  4. 4.
    M. Prietsch, M. Domke, C. Laubschat, T. Mandel, C. Xue, and G. Kaindl, Z. Phys., submitted; M. Prietsch, C. Laubschat, M. Domke, and G. Kaindl, Europhys. Lett. 6, 451(1988); C. Laubschat et al , this workshop.Google Scholar
  5. 5.
    L.H. Yang, C.Y. Fong, and Inder P. Batra, Bull. Am. Phys. Soc. 33, 571 (1988).Google Scholar
  6. 6.
    See for example, Inder P. Batra, Prog, in Surf. Sci. 25, 175 (1987).Google Scholar
  7. 7.
    G.B. Bachelet, D.R. Hamann, and M. Schluter, Phys. Rev. B26, 4199 (1982).ADSCrossRefGoogle Scholar
  8. 8.
    J. Ihm, A. Zunger, and M.L. Cohen, J. Phys. C12, 4409 (1979); erratum J. Phys. C13, 3095 (1980).Google Scholar
  9. 9.
    E.P. Wigner, Phys. Rev. 46, 1002 (1959).ADSCrossRefGoogle Scholar
  10. 10.
    C. Mailhiot, C.B. Duke, and D.J. Chadi, Surf. Sci. 149, 366 (1985); G.X. Qian, R.M. Martin, and D.J. Chadi, Phys. Rev. B37, 1303 (1988).Google Scholar
  11. 11.
    Eugene J. Mele, and J.D. Joannopoulos, Phys. Rev. Lett. 42, 1094 (1979).ADSCrossRefGoogle Scholar
  12. 12.
    J. Ihm, and J.D. Joannopoulos, Phys. Rev. Lett. 47, 679 (1981); Phys. Rev. B26, 4429 (1982).Google Scholar
  13. 13.
    S.B. Zhang, M.L. Cohen, and S.G. Louie, Phys. Rev. B34, 768 (1986).ADSCrossRefGoogle Scholar
  14. 14.
    Inder P. Batra and S. Ciraci, Phys. Rev. B33, 4312 (1986).ADSCrossRefGoogle Scholar
  15. 15.
    R.M. Feenstra, and P. Martensson, Phys. Rev. Lett. 61, 447 (1988).ADSCrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • C. Y. Fong
    • 1
  • L. H. Yang
    • 1
  • Inder P. Batra
    • 2
  1. 1.Department of PhysicsUniversity of CaliforniaDavisUSA
  2. 2.IBM Almaden Research CenterUSA

Personalised recommendations