Abstract
Although many efforts have been focused on gaining a microscopic understanding of the metal-semiconductor interfaces, many properties, such as the pinning of the Fermi-level, and the formation of the Schottky barrier, are still controversial. [1,2] Experimental results were affected by the interface morphology, and surface relaxation, while theoretical results suffer from proper models and a well defined reference energy.
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© 1989 Plenum Press, New York
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Fong, C.Y., Yang, L.H., Batra, I.P. (1989). A Theoretical Study of Na Overlayers on the GaAs (110) Surface. In: Batra, I.P. (eds) Metallization and Metal-Semiconductor Interfaces. NATO ASI Series, vol 195. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0795-2_29
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DOI: https://doi.org/10.1007/978-1-4613-0795-2_29
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