A Theoretical Study of Na Overlayers on the GaAs (110) Surface

  • C. Y. Fong
  • L. H. Yang
  • Inder P. Batra
Part of the NATO ASI Series book series (NSSB, volume 195)


Although many efforts have been focused on gaining a microscopic understanding of the metal-semiconductor interfaces, many properties, such as the pinning of the Fermi-level, and the formation of the Schottky barrier, are still controversial. [1,2] Experimental results were affected by the interface morphology, and surface relaxation, while theoretical results suffer from proper models and a well defined reference energy.


Fermi Level Surface Atom Ideal Surface Surface Relaxation Partial Charge Transfer 
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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • C. Y. Fong
    • 1
  • L. H. Yang
    • 1
  • Inder P. Batra
    • 2
  1. 1.Department of PhysicsUniversity of CaliforniaDavisUSA
  2. 2.IBM Almaden Research CenterUSA

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