Abstract
The formation of metal/semiconductor interfaces is a topic of the utmost interest since more than a century [1]. In spite of the continuous effort our understanding of the microscopic aspects of this problem is far from being satisfactory [1]. These studies have been plagued with complications arising from interdiflusion, mixing and complex chemical reactions taking place at the metal-semiconductor interface. Thus, most of the transition and noble metals when deposited in Ultra-High-Vacuum onto semiconductive surfaces diffuse locally into the substrate rendering almost impossible the task of determining the geometry of the interface by laterally-averaging techniques. Recent work using Scanning Tunneling Microscopy (STM) has unraveled the beauty and complexity of the geometry and electronic structure at the metal/semiconductor interfaces [2].
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Michel, E.G., Asensio, M.C., Miranda, R. (1989). Present Understanding of a Model Metal/Semiconductor Junction: K/Si(001)2x1. In: Batra, I.P. (eds) Metallization and Metal-Semiconductor Interfaces. NATO ASI Series, vol 195. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0795-2_25
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DOI: https://doi.org/10.1007/978-1-4613-0795-2_25
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