Mechanisms of Barrier Formation in Schottky Contacts

  • Winfried Mönch
Part of the NATO ASI Series book series (NSSB, volume 195)

Abstract

Fifty years ago, in 1938, Schottky explained the rectifying behavior of metal-semiconductor contacts (Braun 1874) by a space-charge layer, which is depleted from mobile carriers, on the semiconductor side of the junction. Since then, the microscopic mechanisms determining the barrier heights at such interfaces are under discussion.

Keywords

Migration Enthalpy Manganese Recombination Arsenic 

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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • Winfried Mönch
    • 1
  1. 1.Laboratorium für FestkörperphysikUniversität-GH-DuisburgDuisburgFederal Republic of Germany

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